Advances in Research and Development, Volume 23: Modeling of by Maurice H. Francombe, John L. Vossen

By Maurice H. Francombe, John L. Vossen

Major growth has happened over the last few years in machine applied sciences and those are surveyed during this new quantity. integrated are Si/(Si-Ge) heterojunctions for high-speed built-in circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector constructions operated within the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emissions.

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Example text

A schematic diagram of the JIPELEC system is shown in Fig. 13. Growth of Ge Si~_~ at atmospheric pressure (APCVD) was first reported by Agnello et al. (97). This group initially used a purpose-built reactor and later the ASM Epsilon One reactor (Fig. 14), which had been developed for silicon FIG. 12. Top and side views of UHV/CVD reactor built at Carnegie Mellon University. Multiple wafers are placed on a wafer boat in the load lock and then pushed into the reaction chamber using a magnetically coupled manipulator.

Without including this effect yields the dotted line. predictions (solid lines) with ssll = 4 • germane flow rates, however. This unusual behavior has been observed by a number of researchers (114,122,143). Figure 21 shows the GexSi~_x growth rate measured over a wide range of temperatures by Jang and Reif (143). Robbins et al. (114) suggested that the sticking coefficients decrease on a germanium-rich surface; their data was fit well using the empirical expression SXH4(X) = SXH~(O)/(1 -F 12x ).

This reaction is thought to be second order so it can be written 2Sill2* -+ H2(g ) + 2Sill*. (17) For low silane doses (hence low coverage of Sill 2) the 132 peak is nearly absent (Fig. 16, bottom) so the likely reaction is Sill2* + * - + Sill* + H*. (18) The final stage is the monohydride decomposition; as noted earlier, this is well established as a first-order reaction that can be written Sill* ~ Si* + ~/2H2(g). (19) Some of these conclusions were disputed in a subsequent paper by Hirose et al.

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Advances in Research and Development, Volume 23: Modeling of by Maurice H. Francombe, John L. Vossen
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