By Maurice H. Francombe, John L. Vossen
Major growth has happened over the last few years in machine applied sciences and those are surveyed during this new quantity. integrated are Si/(Si-Ge) heterojunctions for high-speed built-in circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector constructions operated within the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emissions.
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Additional info for Advances in Research and Development, Volume 23: Modeling of Film Deposition for Microelectronic Applications (Thin Films)
A schematic diagram of the JIPELEC system is shown in Fig. 13. Growth of Ge Si~_~ at atmospheric pressure (APCVD) was first reported by Agnello et al. (97). This group initially used a purpose-built reactor and later the ASM Epsilon One reactor (Fig. 14), which had been developed for silicon FIG. 12. Top and side views of UHV/CVD reactor built at Carnegie Mellon University. Multiple wafers are placed on a wafer boat in the load lock and then pushed into the reaction chamber using a magnetically coupled manipulator.
Without including this effect yields the dotted line. predictions (solid lines) with ssll = 4 • germane flow rates, however. This unusual behavior has been observed by a number of researchers (114,122,143). Figure 21 shows the GexSi~_x growth rate measured over a wide range of temperatures by Jang and Reif (143). Robbins et al. (114) suggested that the sticking coefficients decrease on a germanium-rich surface; their data was fit well using the empirical expression SXH4(X) = SXH~(O)/(1 -F 12x ).
This reaction is thought to be second order so it can be written 2Sill2* -+ H2(g ) + 2Sill*. (17) For low silane doses (hence low coverage of Sill 2) the 132 peak is nearly absent (Fig. 16, bottom) so the likely reaction is Sill2* + * - + Sill* + H*. (18) The final stage is the monohydride decomposition; as noted earlier, this is well established as a first-order reaction that can be written Sill* ~ Si* + ~/2H2(g). (19) Some of these conclusions were disputed in a subsequent paper by Hirose et al.
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