Advances in X-Ray Analysis: Volume 9 Proceedings of the by F. W. Young Jr., T. O. Baldwin, A. E. Merlini, F. A.

By F. W. Young Jr., T. O. Baldwin, A. E. Merlini, F. A. Sherrill (auth.), Gavin R. Mallett, Marie J. Fay, William M. Mueller (eds.)

The papers awarded during this quantity of Advances in X-Ray research have been selected from these provided on the Fourteenth Annual convention at the functions of X-Ray research. This convention, backed by way of the Metallurgy department of the Denver learn Institute, collage of Denver, was once hung on August 24,25, and 26, 1965, on the Albany inn in Denver, Colorado. Of the fifty six papers provided on the convention, forty six are integrated during this quantity; additionally incorporated is an open dialogue hung on the consequences of chemical com­ bination on X-ray spectra. the topics offered symbolize a large scope of purposes of X-rays to various fields and disciplines. those incorporated such fields as electron-probe microanalysis, the impression of chemical mix on X-ray spectra, and the makes use of of soppy and ultrasoft X-rays in emission research. additionally incorporated have been periods on X-ray diffraction and fluor­ escence research. there have been numerous papers on distinctive issues, together with X-ray topography and X-ray absorption fine-structure research. William L. Baun contributed substantial attempt towards the convention via organizing the consultation at the impression of chemical mix on X-ray spectra high-quality constitution. a unique consultation was once tested throughout the very good efforts of S. P. Ong at the makes use of and applica­ tions of soppy X-rays in fluorescent research. we provide our honest because of those males, for those designated periods contributed tremendously to the luck of the conference.

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Additional info for Advances in X-Ray Analysis: Volume 9 Proceedings of the Fourteenth Annual Conference on Applications of X-Ray Analysis Held August 25–27, 1965

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E. M. Hull, "Epitaxial Growth of Homogeneous Solid Solutions of GaAs-GaP," J. Electrochem. Soc. 111: 1295-6, 1964. 14. M. S. Abrahams, "Dislocation Etch Pits in GaAs," J. Appl. Phys. 35: 3626,1964. 15. M. Renniger, "Net Plane 'Interferometry' and Applications," in: G. N. Ramachandran, Crystallography and Crystal Perfection, Academic Press, New York, 1963, p. 145. 16. A. Reisman and R. Rohr, "Room Temperature Chemical Polishing of Ge and GaAs," J. Electrochem. Soc. 111: 1425-8, 1964. 17. W. C. Dash, "Distorted Layers in Silicon Produced by Grinding and Polishing," J.

Imura, S. Weissmann, and J. J. 85% Cu by the Divergent X-Ray Beam Method," Acta Cryst. 15: 786, 1962. 6. S. Weissmann and K. Nakajima, "Defect Structure and Density Decrease in Neutron-Irradiated Quartz," J. Appl. Phys. 34: 611, 1963. 7. T. Ellis, L. F. Nanni, A. Shrier, S. Weissmann, G. E. Padawer, and N. Hosokawa, "Strain and Precision Lattice Parameter Measurement by the X-Ray Divergent Beam Method. I," J. Appl. Phys. 35: 3364, 1964. 8. R. E. Hanneman, R. E. Ogilvie, and A. Modrzejewski, "Kossel Line Studies of Irradiated Nickel Crystals," J.

In general, tables of interplanar angles for noncubics do not exist and if the effort is expended to generate them, such a vast array of angles result that they are virtually impossible to use. It is thus necessary to use the symmetry of the pattern to identify the low-index planes. However, on flat-film geometry, due to the small angular range of the data, insufficient low-index points are present to permit orientation. In order to alleviate this problem we have developed the necessary techniques for the interpretation of back-reflection Laue patterns employing cylindrical-film geometry.

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Advances in X-Ray Analysis: Volume 9 Proceedings of the by F. W. Young Jr., T. O. Baldwin, A. E. Merlini, F. A.
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